Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-01-04
2005-01-04
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S513000, C257S506000, C257S501000
Reexamination Certificate
active
06838746
ABSTRACT:
The invention proposes a semiconductor configuration having a substrate, which has at least one component integrated therein. The substrate has a first main side with a metalization. At least parts of the metalization are underlaid with an insulation layer located in the substrate. By virtue of the fact that the insulation layer is realized in the form of a trench lattice, it is possible to reduce parasitic capacitances and undesirable signal power losses in the case of high-frequency signals.
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Greenberg Laurence A.
Landau Matthew
Locher Ralph E.
Stemer Werner H.
Thomas Tom
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