Semiconductor compound electrode material containing calcium and

Details Semiconductor compound electrode material containing calcium and Semiconductor compound electrode material containing calcium and

1997-05-23

2000-08-15

Williams, Alexander Oscar

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 97, 257 96, 257 94, 257615, 257461, 257744, 257745, H01L 29205, H01L 2715, H01S 319

Patent

active

061040444

ABSTRACT:
Disclosed is an electrode material for Group III-V compound semiconductor represented by the general formula In.sub.x Ga.sub.y Al.sub.z N (provided that x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1) doped with a p-type impurity which is capable of obtaining good ohmic contact, and an electrode using the same, thereby making it possible to reduce a driving voltage of a device using the compound semiconductor. The electrode material is a metal comprising at least Ca and a noble metal, wherein the total amount of the weight of Ca and the noble metal is not less than 50% by weight and not more than 100% by weight based on the weight of the whole electrode material.

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patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5652438 (1997-07-01), Sassa et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 5708301 (1998-01-01), Iyechika et al.
patent: 5751752 (1998-05-01), Shakuda

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