Semiconductor compound

Details Semiconductor compound Semiconductor compound

1995-05-17

1996-06-04

Lieberman, Paul

Compositions

Electrically conductive or emissive compositions

Metal compound containing

136264, 136265, 252 623E, 252 6236A, 252 623R, 252 623S, 252 623T, 252 623ZB, 252 623ZT, 420469, 420529, 420579, 423117, 423508, 423511, 427 76, 437 5, H01B 100, H01B 102

Patent

active

055230229

ABSTRACT:
Novel compound semiconductors are of the general formula, X.sub.5 YZ.sub.4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

REFERENCES:
patent: 4523051 (1985-06-01), Mickelson et al.
patent: 5008891 (1991-04-01), Morita
patent: 5045409 (1991-09-01), Eberspacher et al.
patent: 5141564 (1992-08-01), Chen et al.
patent: 5441897 (1995-08-01), Noufi et al.
Morita et al, "Formation of a Cu-Al-Se Phase with a Long Range Order by Molecular Beam Epitaxy." Jap. J. Appl. Phys. Z9,8 pp. L1379-L1381 no month included (1990).
S. N. Nenasheva et al., "Ag.sub.5 GaS.sup.4 -A New Phase in the System Ag-Ga-S", Article.
IzV. Akad. Nauk SSSR, "Neorg. Matter", vol. 14(5), pp. 846-848 (1978).
Morita et al., "Formation of a Cu-Al-Se Order by Molecular BioEpitaxy", Japanese Appln. Pbysth a Long Range 29, 8, pp. L1379-L1381 (1990).

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