Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2008-08-29
2010-10-12
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S455000
Reexamination Certificate
active
07811841
ABSTRACT:
A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
REFERENCES:
patent: 5473192 (1995-12-01), Golubic et al.
patent: 5798537 (1998-08-01), Nitta
patent: 7078729 (2006-07-01), Suzuki et al.
patent: 2005/0112805 (2005-05-01), Goto et al.
patent: 1397984 (2003-02-01), None
patent: 1449060 (2003-10-01), None
patent: 61-182217 (1986-08-01), None
patent: 6-333962 (1994-12-01), None
patent: 11-186598 (1999-07-01), None
Oki Data Corporation
Pert Evan
Rabin & Berdo PC
LandOfFree
Semiconductor composite device, method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor composite device, method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor composite device, method for manufacturing the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4213247