Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-09-09
2008-10-07
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S094000, C257S096000, C257S099000
Reexamination Certificate
active
07432523
ABSTRACT:
A semiconductor composite apparatus includes a semiconductor thin film and a metal layer formed on a substrate. The semiconductor thin film is bonded to the metal layer formed on the substrate. A region is formed between the semiconductor thin film and the metal surface, and contains an oxide of a metal that forms the metal surface. The metal surface is a surface of a metal layer provided on the substrate. The metal surface contains an element selected from the group consisting of Pd, Ni, Ge, Pt, Ti, Cr, and Au. The metal surface is coated with either a Pd layer or an Ni layer.
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patent: 7078729 (2006-07-01), Suzuki et al.
patent: 2005/0112805 (2005-05-01), Goto et al.
patent: 1397984 (2003-02-01), None
patent: 1449060 (2003-10-01), None
patent: 11-186598 (1999-07-01), None
Oki Data Corporation
Pert Evan
Rabin & Berdo PC
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