Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2006-02-27
2010-12-07
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S086000, C257S098000, C257SE33067, C257SE33068
Reexamination Certificate
active
07847298
ABSTRACT:
A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, and a second surface that is on the side of the planarizing layer remote from the substrate. The semiconductor thin film formed on the planarizing layer. The second surface has a roughness of not more than 5 nm.
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Igari Tomoki
Muto Masataka
Ogihara Mitsuhiko
Suzuki Takahito
Oki Data Corporation
Panitch Schwarze Belisario & Nadel LLP
Patton Paul E
Smith Zandra
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