Semiconductor components

Details Semiconductor components Semiconductor components

1973-05-22

1976-10-05

Lynch, Michael J.

357 58, 357 90, H01L 2974

Patent

active

039848582

ABSTRACT:
A semiconductor component having at least three p-n-junctions which may be switched from a blocking state to a conducting state. The base zone, positioned between the second and third p-n-junctions, is characterized in that it comprises three single zones, the center zone of which is more highly doped and appreciably thinner than either of the two outer zones. The doping concentrations in the two outer zones are equal to one another and appreciably lower than that in a control zone, which is positioned between the first and second p-n-junctions. The effect of the foregoing construction is to reduce the recovery time of the semiconductor component without causing an increase in the forward potential drop, or vice-versa.

REFERENCES:
patent: 3231796 (1966-01-01), Shombert
patent: 3277352 (1966-10-01), Hubner
patent: 3370209 (1968-02-01), Davis et al.
patent: 3398334 (1968-08-01), Shockley
patent: 3439239 (1969-04-01), Herlet et al.
patent: 3538401 (1970-11-01), Chu
patent: 3855611 (1974-12-01), Neilson et al.
J. Holt, "The Poss. of Sw. Act. in a Si Thyr. Str. W. Thick Intrinsic Layers," Int. J. Electronics, vol. 29, No. 2, 1970, pp. 149-155.

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