Semiconductor component with Schottky junction for microwave amp

Details Semiconductor component with Schottky junction for microwave amp Semiconductor component with Schottky junction for microwave amp

1991-06-13

1992-12-29

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257284, 257474, 257477, 257571, H01L 2948

Patent

active

051755971

ABSTRACT:
A semiconducting component with a Schottky junction with stacked electrodes has a lower electrode forming an emitter or source, a central electrode forming a base or grid and an upper electrode forming either a collector or a drain. Semiconductor material is between the upper electrode and the lower electrode. The central control electrode is in the form of several adjacent conducting fingers. An insulating material is in the region directly below the fingers between the control electrode and the lower electrode, thereby reducing parasitic capacitance between the control electrode and the lower electrode.

REFERENCES:
patent: 4510016 (1985-04-01), Chi et al.
No Author, "Multiple Grid Permeable Base Transistor," IBM Technical Disclosure Bulletin, vol. 31, No. 5, Oct. '88, 40-3.
Rathman et al., "The Effect of Base-Schottky Geometry on Si PBT Device Performance", IEEE Electron Device Letters, EDL-5, Jun. 1984, No. 6, pp. 191-193.
Ohshima et al., "Self-Aligned NiSi.sub.2 Electrode Fabrication by MBE and Its Application to Etched-Groove Permeable Base Transistor (PBT)", Journal of Crystal Growth, 95 (1989), pp. 490-493.

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