Semiconductor component with plastic sheath and method for produ

Details Semiconductor component with plastic sheath and method for produ Semiconductor component with plastic sheath and method for produ

1996-03-15

1998-04-21

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Outside periphery of package having specified shape or...

257787, 257 99, 257100, 257784, 361759, 361740, 361726, H01L 2304, H01L 2328, H01L 3300, H05K 500

Patent

active

057420980

ABSTRACT:
A semiconductor component includes a semiconductor body. At least one contact metallizing covers at least one portion of a surface of the semiconductor body, defining at least one free portion of the surface not covered by the at least one contact metallizing. A plastic sheath adjoins the semiconductor body having the at least one contact metallizing. The at least one free portion of the surface has a roughening forming a microscopic toothing between the semiconductor body and the plastic sheath. A method for producing a semiconductor component includes producing a semiconductor body, contact metallizings on the semiconductor body, and a microscopic tooth structure on a surface of the semiconductor body. The semiconductor body with the contact metallizings and the microscopic tooth structure is mounted on a system substrate. At least one terminal lead is bonded to one of the contact metallizings and to terminal prongs of the system substrate. The semiconductor body, the contact metallizings, the at least one terminal lead, portions of the terminal prongs and at least portions of the system substrate are sheathed with plastic, while penetrating, filling and curing the plastic in the microscopic tooth structure.

REFERENCES:
patent: 4712129 (1987-12-01), Orcutt
patent: 5122860 (1992-06-01), Kikuchi et al.
patent: 5164815 (1992-11-01), Lim
patent: 5249732 (1993-10-01), Thomas
Patent Abstracts of Japan, E-1397, Jul. 14, 1993, vol. 17, No. 375: & JP-A-5-63112 (Sony) Mar. 12, 1993.
J. Appl. Phys. 75 (11) Jun. 1, 1994 (Petri) pp. 7498-7506 "Silicon roughness induced by plasma etching".

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