Semiconductor component with planar structure

Details Semiconductor component with planar structure Semiconductor component with planar structure

1986-02-10

1986-12-30

Edlow, Martin H.

357 234, 357 52, H01L 2940

Patent

active

046332928

ABSTRACT:
Planar semiconductor component which has a substrate of one conduction type, and a contact-connected zone of opposite conductivity type embedded in the surface of the substrate in planar fashion and having a part thereof emerging to the surface. It also has a control electrode covering that part of the contact-connected contacted zone which emerges to the surface, an insulating layer on the surface, an edge electrode seated on the insulating layer at the edge of the substrate and electrically connected to the substrate, and at least one protective ring zone of the opposite conductivity type positioned between the edge of the substrate and the contact-connected zone and embedded in planar fashion in the surface. The ring zone includes at least one conducting layer completely covering a part of the substrate emerging to the surface between the protective ring zone and the contacted zone, wherein the conducting layer is electrically insulated from the emerging part of the substrate, and electrically contacted by one of the contact-connected protective ring zones embedded in planar fashion in the substrate surface.

REFERENCES:
patent: 3573571 (1971-04-01), Brown et al.
patent: 3763406 (1973-10-01), Bosselaar
patent: 4468686 (1984-08-01), Rosenthal
patent: 4567502 (1986-01-01), Nakagawa et al.
"SIPMOS Technology, an Example of VLSI Precision Realized with Standard LSI for Power Transistors", G. Bell & W. Ladenhauf, Siemens Forsch.-U. Entwickl.-Ber. Bd. 9(1984) 190-194.

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