Patent
1979-09-18
1981-12-08
Edlow, Martin H.
357 13, 357 38, 357 39, H01L 2934
Patent
active
043050859
ABSTRACT:
A semiconductor component including at least one planar PN junction formed between a first semiconductor region and a second semiconductor region, zone guard rings surrounding the first region and surrounded by the second region in order to improve the reverse-current behavior of the PN junction, and a third semiconductor region having the same conductivity type as the second region, but having a higher doping concentration than the latter provided in the second region preceding the respective edges of the guard rings on the side of the PN junction. Typically the third region is doped such that with the PN junction polarized in the blocking direction, at least one point in the third region remains at zero field strength. Additionally provided is a fourth semiconductor region between the guard rings and between the guard ring closest the PN junction and the PN junction, which has the same conductivity type as the second region, but a lesser doping concentration.
REFERENCES:
patent: 3911473 (1975-10-01), Nienhuis
patent: 3971061 (1976-07-01), Matsushita
patent: 4150391 (1979-04-01), Jaecklin
patent: 4157563 (1979-06-01), Bosselaar
Jaecklin Andre
Weisshaar Erich
BBC Brown Boveri & Company Limited
Edlow Martin H.
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