Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1992-01-17
1994-07-26
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257184, 257194, 257425, 257431, H01L 2714, H01L 3100
Patent
active
053329112
ABSTRACT:
A semiconductor radiation detector with layer-wise construction and a contive region having a two-dimensional or quasi one-dimensional electron or hole gas is provided in which adiabatic transport in edge channels occurs at least regionally and in which at least two contacts are provided to this conductive region. The transport in the edge channels is disturbed by interaction with the electromagnetic radiation to be detected, i.e. an increase of the scattering rate between the edge channels is caused. This leads to a change of the resistance measurable between the contacts, with a means being provided for measuring the change of resistance to thereby detect the incident radiation.
REFERENCES:
patent: 4740823 (1988-04-01), Thompson
patent: 5144580 (1992-09-01), Niu et al.
Diessel Edgar
Mueller Gerhard
von Klitzing Klaus
Weiss Dieter
Crane Sara W.
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
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