Semiconductor component with a space-saving edge...

Details Semiconductor component with a space-saving edge... Semiconductor component with a space-saving edge...

2011-08-16

2011-08-16

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S495000, C257S496000

Reexamination Certificate

active

07999343

ABSTRACT:
An arrangement for use in a semiconductor component includes a semiconductor body and an edge structure. The semiconductor body having a first face, a second face, a first semiconductor zone of a first conductance type, at least one second semiconductor zone of a second conductance type, and a semiconductor junction formed therebetween running substantially parallel to the first face. The edge structure is laterally adjacent to the second semiconductor zone and includes at least a first trench. The first trench extends in a vertical direction into the semiconductor body and is filled with a dielectric material. The edge structure further includes a third semiconductor zone of the second conductance type, which, at least partially, is adjacent to a face of the at least one trench which faces away from the first face. The edge structure further includes a fourth semiconductor zone of the first conductance type, which is more heavily doped than the first semiconductor zone, and is proximate to the first face.

REFERENCES:
patent: 6873012 (2005-03-01), Stecher et al.
patent: 2005/0093062 (2005-05-01), Tihanyi
patent: 3832750 (1990-03-01), None
patent: 10312911 (2004-10-01), None
patent: 1394860 (2004-03-01), None
patent: WO 00/38242 (2000-06-01), None
Baliga, B. Jayant.Power Semiconductor Devices. Boston, PWS Publishing Company: 1996. pp. 81-110. (32 Pages).

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