Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1999-01-15
2000-11-21
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257328, 257341, 257370, 257378, 257401, 257408, 257411, 257394, H01L 2972
Patent
active
061506753
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an MOS-controlled semiconductor component having a structure that assures a good switching behavior of the component without deteriorating its static properties.
2. Description of the Prior Art
As voltage-controlled components, power MOSFETs do not require a control current in the stationary operating condition. Due to their structure, however, power MOSFETs contain comparatively large parasitic capacitances that must be charge-reversed at every switching event. Since these capacitances, which influence the switching behavior of the MOSFET, are composed of both metallizations and insulator layers, as well as of the space-charge zones forming in the region of the pn-junctions, their respective size depends on the applied voltage in a non-linear way.
In known MOS-controlled power semiconductors (MOSFETs, IGBTs), the reactance capacitance produced by tile gate electrode and the insulator of the gate-drain or of the gate-collector overlap area has a substantially disadvantageous effect on the switching behavior of the respective component and its switching environment (freewheeling branch). In particular, thus, the switching speed, the control performance, the rise rate, the dynamic strength and the dissipated power of the component are negatively influenced by the parasitic properties of the reactance capacitance.
The gate-drain or gate-collector overlap area and, thus, the reactance capacitance in MOS-controlled components can be made clearly smaller by a modification of the gate structure (see B. Jayant Baliga: Modern Power Devices, John Wiley & Sons (1987), pages 300 through 305). Although this measure improves the high-frequency behavior of the respective component, it also significantly deteriorates its breakdown strength (see Modern Power Devices, pages 274-276, particularly FIG. 6.10). Attempts to reduce the reactance capacitance with a thicker gate oxide without significantly lowering the blocking voltage were also unsuccessful.
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to, in particular, an MOS-controlled-semiconductor component having what is aimed at is a structure that assures a good switching behavior of the component without deteriorating its static properties. Despite a comparatively small reactance capacitance and the accompanying improvement of the dynamic properties, thus, the component should exhibit a high breakdown strength and, in particular, be employable in the field of power electronics.
The present invention enables the construction of power semiconductors (MOSFETs, IGBTs) with good dynamic and static properties. Due to the small reactance capacitance, the outlay for the drive and wiring of the components and, thus, their manufacturing or fabrication costs are considerably reduced.
Accordingly, in an embodiment of the present invention, a semiconductor component is provided having a control structure for modulating the conductivity of a channel region, wherein the semiconductor component includes: a semiconductor body having a first principal surface and a second principal surface, the first principal surface provided with the first electrode and the second principal surface at a control structure side of the semiconductor component provided with a semiconductor layer of a first conductivity type; a first semiconductor region of the first conductivity type and a second semiconductor region of a second conductivity type formed at a surface of the semiconductor layer on the control structure side, wherein a region of the second semiconductor region which lies between the first semiconductor region in a part of the semiconductor layer outside of the second semiconductor region is provided as a channel and is present at the surface of the semiconductor layer; a second electrode contacting the first and second semiconductor regions outside the region provided for the channel; a gate electrode arranged electrically insulated from the semiconductor layer and parallel to t
REFERENCES:
patent: 5510634 (1996-04-01), Okabe et al.
Patent Abstacts of Japan--58087874--May 25, 1983.
Modern Power Devices, Baliga, Jan. 1987, pp. 274-353.
Integrated Power Devices, Tihanyi, pp. 6-12, Dec. 1982, IEDM.
A High Performance Planar Power MOSFET, Coen et al., pp. 340-343, Feb. 1980, IEEE Transactions on Electron Devices.
Brunner Heinrich
Franke Torsten
Porst Alfred
Turkes Peter
Siemens Aktiengesellschaft
Wojciechowicz Edward
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