Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2007-03-20
2007-03-20
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S329000
Reexamination Certificate
active
10141834
ABSTRACT:
A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.
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Published International Application No. 97/29518 (Tihanyi et al.), dated Aug. 14, 1997.
Ahlers Dirk
Deboy Gerald
Weber Hans
Dickey Thomas L.
Greenberg Laurence A
Locher Ralph E.
Stemer Werner H.
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