Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2011-07-19
2011-07-19
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S284000, C257S301000, C257S304000, C257S305000, C257S330000, C257S332000, C257S413000, C257S755000, C257SE27091, C257SE27092, C257SE21585, C438S243000, C438S248000, C438S259000, C438S270000, C438S386000, C438S391000
Reexamination Certificate
active
07982284
ABSTRACT:
A semiconductor component includes a semiconductor body, in which are formed: a substrate of a first conduction type, a buried semiconductor layer of a second conduction type arranged on the substrate, and a functional unit semiconductor layer of a third conduction type arranged on the buried semiconductor layer, in which at least two semiconductor functional units arranged laterally alongside one another are provided. The buried semiconductor layer is part of at least one semiconductor functional unit, the semiconductor functional units being electrically insulated from one another by an isolation structure which permeates the functional unit semiconductor layer, the buried semiconductor layer, and the substrate. The isolation structure includes at least one trench and an electrically conductive contact to the substrate, the contact to the substrate being electrically insulated from the functional unit semiconductor layer and the buried layer by the at least one trench.
REFERENCES:
patent: 4320411 (1982-03-01), Fukushima
patent: 4688069 (1987-08-01), Joy et al.
patent: 4733287 (1988-03-01), Bower
patent: 4745081 (1988-05-01), Beyer et al.
patent: 4792834 (1988-12-01), Uchida
patent: 4910567 (1990-03-01), Malhi
patent: 4910572 (1990-03-01), Kameyama
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5021852 (1991-06-01), Sukegawa et al.
patent: 5614750 (1997-03-01), Ellul et al.
patent: 5973257 (1999-10-01), Cantarini et al.
patent: 6114768 (2000-09-01), Gaul et al.
patent: 6121102 (2000-09-01), Norstrom et al.
patent: 6265741 (2001-07-01), Schrems
patent: 6690080 (2004-02-01), Norstrom et al.
patent: 7323745 (2008-01-01), Kinzer
patent: 7456470 (2008-11-01), Jones
patent: 2004/0256694 (2004-12-01), Kostylev et al.
patent: 2006/0065923 (2006-03-01), Pfirsch
patent: 2006/0113589 (2006-06-01), Jones
patent: 2006/0131647 (2006-06-01), Meyer
patent: 2006/0220093 (2006-10-01), Van Schaijk et al.
patent: 2006/0246650 (2006-11-01), Williams et al.
patent: 2007/0018195 (2007-01-01), Hartner et al.
patent: 2007/0051994 (2007-03-01), Song et al.
patent: 2007/0190728 (2007-08-01), Sreekantham et al.
patent: 1244040 (2000-02-01), None
patent: 0 112 489 (1984-07-01), None
patent: 0499403 (2002-08-01), None
patent: 1 353 368 (2003-10-01), None
patent: 63-24672 (1998-02-01), None
De Pestel, F. et al., “Deep Trench Isolation for a 50V 0.35 um Based Smart Power Technology,” IEEE, pp. 191-194 (2003).
Infineon Technologies, “Deep Trench Isolation (DTI) and Deep Trench Buried Layer Contact (Sinker) for SPTx,” pp. 8 (Date Unknown).
Chinese Office Action from the State Intellectual Property Office, P.R. China, Chinese Patent Application No. 200710127113.8, Semiconductor Component and Methods for Producing a Semiconductor Component, Action Issued Mar. 6, 2009.
The Second Chinese Office Action for Chinese Patent Application No. 200710127113.8 dated Aug. 6, 2010 (3 pages).
Bonart Dietrich
Gross Thomas
Gruber Hermann
Hartner Walter
Meiser Andreas
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Landau Matthew C
Malek Maliheh
LandOfFree
Semiconductor component including an isolation structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor component including an isolation structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component including an isolation structure and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2625159