Semiconductor component having field-shaping regions

Details Semiconductor component having field-shaping regions Semiconductor component having field-shaping regions

2005-05-10

2005-05-10

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S133000

Reexamination Certificate

active

06891204

ABSTRACT:
A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.

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patent: 5945701 (1999-08-01), Siergiej et al.
patent: 0 344 514 (1989-12-01), None

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