Patent
1990-05-04
1991-10-22
James, Andrew J.
357 238, 357 27, 357 40, 357 45, 357 51, 357 65, H01L 2348, H01L 2978, H01L 2722
Patent
active
050600486
ABSTRACT:
A discretely constructed MOSFET is switched by a voltage applied between gate terminal and source terminal. The source terminal has a self-inductance in which a fast change of the load current induces a considerable voltage which opposes the applied gate-source bias. This opposing voltage is reduced since the source contact is connected to an auxiliary terminal which is largely magnetically decoupled from the source terminal. A control voltage is applied between gate terminal and auxiliary terminal. When a plurality of MOSFETs are connected in parallel, oscillations in the control circuit can thus be effectively suppressed.
REFERENCES:
patent: 3749985 (1973-07-01), Dawson
patent: 4462041 (1984-07-01), Glenn
patent: 4739389 (1988-04-01), Goedblood
Sedra et al., "Micro-Electronic Circuits", p. 306, copyright 1982.
Chapter 6: Paralleling Power MOSFETs-Motorola TMSO Power MOSFET Data A-49 through A71.
Advanced Design With Power MOSFETs by Rudy Severns-Controlling Oscillation in Parallel Power MOSFETs PCI, Oct. 1984, Proceedings 209-213.
Semiconductor Device--vol. 8, No. 123 (E-249) 1560, Jun. 8, 1984, Patent Abstracts of Japan.
Nov. 12, 1981, vol. 5, No. 176 (E81) 843 Transistor Array, Patent Abstracts of Japan.
Amann Heinz
Hebenstreit Ernst
Lorenz Leo
Schierz Winfried
James Andrew J.
Ngo Ngan Van
Siemens Aktiengesellschaft & Semikron GmbH
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