Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2007-03-06
2007-03-06
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S653000, C257S646000, C257S631000, C257S636000, C257S629000
Reexamination Certificate
active
11014193
ABSTRACT:
The invention relates to a semiconductor component having a semiconductor body (100) and at least one pn junction present in the semiconductor body (100) and an amorphous passivation layer (70) arranged at least in sections on a surface (101) of the semiconductor body (100), the following holding true for the minimum Ds,min of an interface state density Ds at the junction between the passivation layer (70) and the semiconductor body (100):Ds,min≥NS,BdEgwhere NS,Bdis the breakdown charge and Egis the band gap of the semiconductor material used for the semiconductor body (100).
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Erdem Fazli
Flynn Nathan
Infineon - Technologies AG
Maginot Moore & Beck
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