Semiconductor component having a passivation layer and method fo

Details Semiconductor component having a passivation layer and method fo Semiconductor component having a passivation layer and method fo

1995-09-29

1997-05-20

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257642, 257651, H01L 2358

Patent

active

056314965

ABSTRACT:
A semiconductor component has a semiconductor body with at least on pn-junction therein, extending to the surface of the semiconductor body, and has a passivation layer composed of boron-doped, amorphous, hydrogenous carbon (A-C:H) which covers at least the portion of the pn-junction extending to the surface, the boron content of the passivation layer being between 0.1 per mil and 4% by weight. The passivation layer is manufactured on the semiconductor body by deposition from a high-frequency, low-pressure plasma which is generated in a mixture of gaseous, organic compounds containing carbon and hydrogen and gaseous, organic boron compounds.

REFERENCES:
patent: 5039358 (1991-08-01), Birkle et al.
patent: 5094915 (1992-03-01), Subramaniam
patent: 5330616 (1994-07-01), Yamazaki
"Characteristics and Boron doping Effect of Hydrogenated Amorphous Carbon lms," Noda et al., J. Appl. Phys., vol. 60, No. 4, Aug., 1986, pp. 1540-1542.
Derwent Abstract AN 87-069228 for Japanese Application 6203050 (Jan. 31, 1987).

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