Semiconductor component having a first earlier structure...

Details Semiconductor component having a first earlier structure... Semiconductor component having a first earlier structure...

2005-12-06

2005-12-06

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S417000, C257S414000, C438S052000, C438S053000, C073S704000, C073S715000, C073S716000, C073S718000

Reexamination Certificate

active

06972447

ABSTRACT:
A semiconductor component for a semiconductor substrate, in which a first section and a second section are provided, and in which the pore structure of the first section differs from the pore structure of the second section.

REFERENCES:
patent: 6641643 (2003-11-01), Jensvold et al.
patent: 2002/0157473 (2002-10-01), Stemme et al.
patent: 2002/0170875 (2002-11-01), Benzel et al.
patent: 100 32 579 (2002-01-01), None
patent: 100 46 622 (2002-04-01), None
patent: 1 088 785 (2001-04-01), None
patent: WO 02/36484 (2002-05-01), None
patent: WO 03/016203 (2003-02-01), None
R.W Tjeskstra et al. “Multi-walled Microchannels: Free-standing Porous Silicon Membrane For Use in Mu TAS”, Journal of Microelectromechanical Systems, IEEE INC., Bd. 9 Nr. 4, Dec. 2000, pp. 495-501.
H. Artmann et al., “Monocrystalline SI Membranes For Pressure Sensors Fabricated By A Novel Surface Micromachining Process Using Porous Silicon”, Proceedings of Spie, Merrnes Components and Applications for Industry, Automobiles, Aerospace and Communication II, Jam. 28-29, 2003, San Jose, CA, Bd. 4981, pp. 65-70.
G. Lammel et al. “Free-Standing, Mobile 3D Porous Silicon Microstructures”, Sensores and Actuators A., Bd. 85, No. 1-3, Aug. 25, 2000, pp. 356-360.

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