Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1993-12-10
1995-03-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257173, 257175, 257499, 361 56, 361 91, 327310, H01L 2974, H01L 2986
Patent
active
054019842
DESCRIPTION:
BRIEF SUMMARY
The present invention relates to a semiconductor component for limiting transient voltages on supply lines.
The semiconductor component is especially suitable for protecting telephone system components from transient disturbances which would appear on the signal lines of the telephone system.
Past telephone systems used electromechanical components which could withstand high transient voltages which occur on signal lines as a result of natural electrical disturbances such as lightning strikes, for example. The components used in modern telephone systems consist mainly of semiconductor devices which are vulnerable to the high transient voltages which occur in telephone systems, so there is a requirement for a protective device, or protective devices, for telephone system components.
Semiconductor devices have also replaced more robust devices in other situations where they may be subjected to, and need to be protected from, high transient voltages, so there is a requirement for a protective device, or protective devices, for semiconductor devices in systems other than telephone systems.
It is an object of the present invention to provide a semiconductor component, which, when connected to the signal or other lines of a system, is capable of limiting transient voltages induced in those lines.
In accordance with the present invention, a semiconductor component, suitable for limiting transient voltages on the supply lines of a system having at least three supply lines, includes at least three input means for connection to respective ones of the supply lines, and, for each input means, a respective multi-junction diode which has a threshold voltage at which it changes from a high-impedance state to a low-impedance state, each multi-junction diode being connected in the same sense between a respective input means and a common terminal, and each multi-junction diode being paired with a respective further diode connected in shunt with it and in the opposite sense to it and one pair of the diodes having current capacities substantially equal to the combined current capacities of the other pairs of diodes.
The form of the semiconductor component having three input means is especially suitable for use in a telephone system.
Preferably, the cathode electrodes of the multi-junction diodes are connected to respective input means.
In a first form of the semiconductor component, each of the further diodes is a multi-junction diode.
In a second form of the semiconductor component, each of the further diodes is a diode having a single PN junction.
In a further form of the semiconductor component, at least one, but not all, of the further diodes is a multi-junction diode, and each of the other further diodes has a single PN junction.
Preferably, the semiconductor component has the form of a semiconductor body having two substantially parallel major surfaces, wherein the electrodes of the diodes lie on the major surfaces, the input means are a plurality of electrical conductors which make contact, on one of the major surfaces, with the electrodes of respective pairs of diodes, a further electrical conductor which is the common terminal makes contact on the other of the major surfaces with all of the electrodes at that surface, and the other pairs of diodes are symmetrically positioned in relation to the pair of diodes having current capacities substantially equal to the combined current capacities of the other pairs of diodes.
Preferably, the diodes are alternately a multi-junction diode and a further diode, both along and across the major surface, and each input means contacts a diode pair comprising a multi-junction diode and a further diode, and, preferably, each input means extends across a part of the major surface.
In one arrangement for the semiconductor component, each of the further diodes is a multi-junction diode and an isolation region isolates each diode pair electrically from the other multi-junction diode pairs which occupy the same semiconductor body.
In an alternative arrangement for the semiconductor compone
REFERENCES:
patent: 4282555 (1981-08-01), Svedberg
Byatt Stephen W.
Maytum Michael J.
Baumann Russell E.
Donaldson Richard L.
Grossman Rene E.
Prenty Mark V.
Texas Instruments Incorporated
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