Semiconductor component for the emission of electromagnetic...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S013000, C257S096000, C257S097000, C257S102000, C257S103000

Reexamination Certificate

active

06844565

ABSTRACT:
According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.

REFERENCES:
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5636237 (1997-06-01), Terakado et al.
patent: 5821555 (1998-10-01), Saito et al.
patent: 5877509 (1999-03-01), Pau et al.
patent: 5903588 (1999-05-01), Guenter et al.
patent: 5966396 (1999-10-01), Okazaki et al.
patent: 6028875 (2000-02-01), Knight et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6057565 (2000-05-01), Yoshida et al.
patent: 28 19 843 (1978-11-01), None
patent: 0 851 542 (1998-07-01), None
patent: 2 316 747 (1997-01-01), None
patent: 06-291365 (1994-10-01), None
patent: 09-283854 (1997-10-01), None
patent: 11-097802 (1999-04-01), None
Binari, S.C. et al.: “H, He, and Implant Isolation of N-type GaN.”,J. Appl. Phys., vol. 78, No. 5, pp. 3008-3011; 1995.
Kim, JK. et al.: “Low Resistance Pd/Au Ohmic Contacts to P-type GaN.”,Appl. Phys. Lett., vol. 73, No. 20; 1998.
Oomura, E. et al.: “Low Threshold InGaAsP/InP Buried Crescent Laser with Double Current Confinement Structure.”,IEEE Journal of Quantum Electronics, vol. QE-17, No. 5, pp. 646; 1981.
Suzuki, M. et al.: “Low Resistence Ta/Ti contacts for P-type GaN.”,Appl. Phys. Lett., vol. 74, No. 2; 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor component for the emission of electromagnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component for the emission of electromagnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component for the emission of electromagnetic... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3404911

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.