Semiconductor component for generation of optical radiation

Details Semiconductor component for generation of optical radiation Semiconductor component for generation of optical radiation

1984-12-04

1987-02-17

Sikes, William L.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 55, 372 45, H01L 3300, H01S 319

Patent

active

046443797

ABSTRACT:
A semiconductor component for electrical generation of optical radiation, for example an LED, is provided. The component includes a semiconductor body that contains a first region of material of a first conductivity, a second region of material of a second conductivity type adjacent to the first region; and a PN junction between these regions. The first region has a central part of a material with a first band gap and a peripheral part laterally surrounding the central part of the first region. The material of the peripheral part has a band gap larger than the bang gap of the central part of the first region. The material of the second region has a larger band gap than the band gap of the central part of the first region.

REFERENCES:
patent: 3476993 (1969-11-01), Aldrich et al.
patent: 3968564 (1976-07-01), Springthorpe
patent: 4386429 (1983-05-01), Anthony
patent: 4408331 (1983-10-01), Hartman et al.
Grothe et al., "A High Speed InGaAsP Luminescent Diode", Conference: Proceedings of the Optical Communication Conference, Sep. 17-19, 1979, pp. 16.4-1-16.4-4.

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