Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-05-31
2005-05-31
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S017000, C257S016000, C257S089000, C257S080000, C257S086000, C257S028000, C257S013000, C257S088000, C257S097000, C257S098000, C257S099000, C257S061000, C438S022000, C438S028000, C313S498000, C313S499000
Reexamination Certificate
active
06900466
ABSTRACT:
A semiconductor component for generating a polychromatic electromagnetic radiation has a semiconductor chip with a first semiconductor layer and a second semiconductor layer, which is provided adjacent to the first semiconductor layer and has an electroluminescent region. The electroluminescent region emits electromagnetic radiation of a first wavelength. The first semiconductor layer includes a material which, when excited with the electromagnetic radiation of the first wavelength, re-emits radiation with a second wavelength which is longer than the first wavelength.
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Hommel Detlef
Wenisch Helmut
Greenberg Laurence A.
Im Junghwa
Lee Eddie
Locher Ralph E.
Osram GmbH
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