Semiconductor component for a high blocking bias

Details Semiconductor component for a high blocking bias Semiconductor component for a high blocking bias

1991-10-29

1994-03-29

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

257409, 257652, 257659, H01L 29780, H01L 29400

Patent

active

052987892

ABSTRACT:
Semiconductor components having planar structures such as MOSFETs, bipolar transistors, and isolated gate bipolar transistors are provided with field plates (5) and, potentially, with guard rings for increasing the blocking bias. A further improvement can be achieved when the zone adjoining the surface of the semiconductor body has its surface outside the planar zones (3) provided with a region (9) that has the same conductivity type as the zone and a higher doping concentration than this zone.

REFERENCES:
patent: 3763406 (1973-10-01), Bosselaar
patent: 4419685 (1983-12-01), Sugawara et al.
patent: 4633292 (1986-12-01), Fellinger et al.
patent: 4713681 (1987-12-01), Beasom
patent: 4825278 (1989-04-01), Hillenius et al.
"Practical Size Limits of High Voltage IC's", by Sugawara et al., International Electron Devices Meeting, Washington, D.C., Dec. 5-7, 1983, Electron Devices Society of IEEE, pp. 412-415.

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