Semiconductor component containing compound of aluminum,...

Details Semiconductor component containing compound of aluminum,... Semiconductor component containing compound of aluminum,...

2005-07-25

2010-06-29

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

C257S586000, C257SE23032, C257SE29006, C257SE29007, C257SE29012, C257SE29013, C257SE29016, C257SE29024

Reexamination Certificate

active

07745908

ABSTRACT:
A Semiconductor component that contains AlxGayIn1-x-yAszSb1-z, whereby the parameters x, y, and z are selected such that a bandgap of less than 350 meV is achieved, whereby it features a mesa-structuring and a passivation layer containing AlnGa1-nAsmSb1-mis applied at least partially on at least one lateral surface of the structuring, and the parameter n is selected in the range of 0.4 to 1 and the parameter m in the range of 0 to 1.

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English Language Abstract of JP 11-274167.

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