Semiconductor component comprising areas with a high...

Details Semiconductor component comprising areas with a high... Semiconductor component comprising areas with a high...

2007-10-16

2007-10-16

Malsawma, Lex (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

C438S140000

Reexamination Certificate

active

11014614

ABSTRACT:
A structure formed in a semiconductor substrate having at least one area having a high concentration of atoms of a metal such as platinum or gold, in which the area is surrounded with at least one first trench penetrating into the substrate.

REFERENCES:
patent: 3947864 (1976-03-01), Yatsuo et al.
patent: 4792833 (1988-12-01), Fukushima
patent: 4855799 (1989-08-01), Tanabe et al.
patent: 2002/0179925 (2002-12-01), Tihanyi
patent: 100 01 871 (2001-08-01), None
French Search Report from French Patent Application 03/51111, filed Dec. 18, 2003.
Patent Abstracts of Japan, vol. 0144, No. 37 (E-0980), Sep. 19, 1990 & JP 2 170471 A (Fuji Electric Co. Ltd.).

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