Semiconductor component comprising a planar pn-junction

Details Semiconductor component comprising a planar pn-junction Semiconductor component comprising a planar pn-junction

1988-09-23

1990-03-06

James, Andrew J.

357 52, 357 53, 357 13, 357 35, H01L 21265

Patent

active

049070568

ABSTRACT:
A semiconductor region that is inserted into a semiconductor member is provided, the latter being separated from the former by a planar pn junction including a first, more highly doped sub-region and a second, more lightly doped sub-region that is limited by a part of the pn junction that gradually approaches a boundary surface of the semiconductor member. An electrode contacts the semiconductor region and covers a part of the second sub-region and extends toward the lateral limitation of the semiconductor region to such an extent that, given the application of a voltage inhibiting the pn junction the space charge zone forming thereat has its edge lying in the boundary surface just reaching the electrode edge given a reduced breakdown voltage.

REFERENCES:
patent: 4672738 (1987-06-01), Stengl
patent: 4740477 (1988-04-01), Einthoven

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