Semiconductor component comprising a drift zone and a drift...

Details Semiconductor component comprising a drift zone and a drift... Semiconductor component comprising a drift zone and a drift...

2007-02-15

2010-10-26

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE31046, C257SE31049, C257SE21182, C257SE21207, C257S328000

Reexamination Certificate

active

07821033

ABSTRACT:
A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

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Masashi Shima, Strained-SiGe-Channel p-MOSFET with Enhanced Hole Mobility and Lower Parasitic Resistance, Fujitsu Sci. Tech. J., Jun. 2003, p. 79-83.

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