Semiconductor component comprising a buried mirror

Details Semiconductor component comprising a buried mirror Semiconductor component comprising a buried mirror

2005-12-08

2008-12-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S069000, C257SE27122, C257SE33069

Reexamination Certificate

active

07470559

ABSTRACT:
A method for forming a buried mirror in a semiconductor component includes the steps of forming a structure comprising a semiconductor layer laid on an insulating layer covering a substrate; forming one or several openings in the semiconductor layer emerging at the surface of the insulating layer; eliminating a portion of the insulating layer, whereby a recess is formed; forming a second thin insulating layer against the wall of the recess; and forming a metal layer in the recess against the second insulating layer.

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Article entitled: “Silicon-based resonant-cavity-enhanced photodiode with a buried SiO2reflector” by Sinnis, V.S., et al, published by Applied Physics Letters, American Institute of Physics, New York, USA, in vol. 74, No. 9, on Mar. 1, 1999, pp. 1203-1205.
International Search Report—France—re application FR 04/52900, dated Jun. 2, 2005.

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