Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-04-04
2006-04-04
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S773000, C257S659000, C257S684000, C257S690000, C257S704000, C257S710000, C257S723000, C257S731000
Reexamination Certificate
active
07023086
ABSTRACT:
The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.
REFERENCES:
patent: 195 49 011 (1997-07-01), None
patent: 199 38 302 (2000-03-01), None
patent: 0 277 546 (1992-06-01), None
patent: 0 427 143 (1995-02-01), None
patent: 2001185679 (2001-07-01), None
Gutsmann, B. et al., “Exact Inductive Parasitic Extraction for Analysis of IGBT Parallel Switching including DCB-Backside Eddy Currents,” IEEE, pp. 1291-1295 (2000).
Gutsmann, Bernd et al., “Explanation of IGBT Tail Current Oscillations by a Novel “Plasma Extraction Transit Time” Mechanism,” Proceedings of the 31stEuropean Solid-State Device Research Conference, pp. 4 (Sep. 11-13, 2001).
Takahashi, Yoshikazu et al., “Ultra High-Power 2.5kV-1800A Power Pack IGBT,” IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 233-236 (May 26-29, 1997).
Gutsmann Bernd
Miller Gerhard
Mourick Paul-Christian
Silber Dieter
Dicke Billig & Czaja, PLLC
Infineon - Technologies AG
Nelms David
Nguyen Tram H.
LandOfFree
Semiconductor component arrangement with a reduced... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor component arrangement with a reduced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component arrangement with a reduced... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3552525