Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-03-03
1997-05-27
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257143, H01C 2702
Patent
active
056335156
ABSTRACT:
MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode connected to the component having a limiting diode with a breakdown voltage that is lower than the breakdown voltage of the freewheeling diode by a defined amount is provided. This over-voltage protection can be achieved in a simple way by integrating the limiting diode into the semiconductor body of the freewheeling diode and by a corresponding arrangement of the anode zone of the limiting diode.
REFERENCES:
patent: 5294843 (1994-03-01), Tursky et al.
patent: 5360984 (1994-11-01), Kirihata
J. Enzinger et al., "SMART-Power-Bauelemente auf der Basis der SIPMOS-Technologie", Markt & Technik, Design & Elektronik, Ausgabe 21, Oct. 14, 1986.
Gantioler Josef-Matthias
Porst Alfred
Stut, deceased Hans
Tihanyi Jenoe
Crane Sara W.
Hardy David B.
Siemens Aktiengesellschaft
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