Semiconductor component and method of manufacture and...

Details Semiconductor component and method of manufacture and... Semiconductor component and method of manufacture and...

2005-08-16

2005-08-16

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S012000, C438S018000, C324S537000, C324S719000, C324S763010

Reexamination Certificate

active

06929963

ABSTRACT:
A semiconductor component having a monitoring structure suitable for monitoring metal migration of a metallization system and a method for manufacturing the semiconductor component. A semiconductor substrate is provided having a major surface. A first extrusion monitoring element is formed over the major surface. A notched test element is formed over the first extrusion monitoring element. A second extrusion monitoring element is formed over the notched test element. A current is conducted through the notched test element. The resistance between the notched test element and at least one of the first and second extrusion monitoring elements is monitored to determine if a short has been created.

REFERENCES:
patent: 3983479 (1976-09-01), Lee et al.
patent: 5264377 (1993-11-01), Chesire et al.
patent: 5472774 (1995-12-01), Goad et al.
patent: 6768323 (2004-07-01), Hau-Riege et al.

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