Semiconductor component and method of manufacture

Semiconductor device manufacturing: process – Making passive device

Reexamination Certificate

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Details

C438S329000, C438S171000, C257S528000, C257SE27024, C257SE21003

Reexamination Certificate

active

07829426

ABSTRACT:
A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

REFERENCES:
patent: 5611008 (1997-03-01), Yap

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