Semiconductor component and method for producing the same

Details Semiconductor component and method for producing the same Semiconductor component and method for producing the same

2005-09-27

2005-09-27

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S471000, C257S472000, C257S473000, C257S474000, C257S475000, C257S476000, C257S484000, C257S485000, C438S092000, C438S167000, C438S570000

Reexamination Certificate

active

06949401

ABSTRACT:
A method for producing a semiconductor component with adjacent Schottky (5) and pn (9) junctions positions in a drift area (2, 10) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 1018cm−3is provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 1014and 1017cm−3is homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400° C. and 1700° C. Following this temperature treatment, a first metal coating is deposited on the implanted surface in order to form a Schottky contact and then a second metal coating is deposited in order to form an ohmic contact. Subsequently the first and second metal coatings are structured as designed.

REFERENCES:
patent: 4641174 (1987-02-01), Baliga
patent: 5017976 (1991-05-01), Sugita
patent: 5041881 (1991-08-01), Bishop et al.
patent: 5166760 (1992-11-01), Mori et al.
patent: 5262669 (1993-11-01), Wakatabe et al.
patent: 5345100 (1994-09-01), Kan et al.
patent: 5753960 (1998-05-01), Dickmann
patent: 6097046 (2000-08-01), Plumton
patent: 6501145 (2002-12-01), Kaminski et al.
patent: 6649995 (2003-11-01), Tooi et al.
patent: 196 33 183 (1992-02-01), None
patent: 42 10 402 (1992-10-01), None
patent: 295 04 629 (1995-08-01), None
patent: 0 380 340 (1990-08-01), None
Itoh et al. “Excellent Reverse Blocking Characteristics of High-Voltage 4H-SIC Schottky Rectifers With Boron-Implanted Edge Termination”; IEEE Electron Devices Letter; vol. 17, No. 3, Mar. 1, 1996, pp. 139-141.
Mohammad et al. “Near- Deal Platinum-Gan Schottkymdiods”; Electronic Letters, vol. 32, No. 6, Mar. 14, 1996, pp. 598/599.
Rao et al. : “Al and N Ion Implantations in 6H-SIC”, Institute of Physics Conference Series; Sep. 18, 1995, pp. 521-524.
Wang et al.: “High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN”, Physics Letters, vol. 68, No. 8, Feb. 26, 1996, pp. 1267-1269.

Affiliated with

Also associated with

Rating

Semiconductor component and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3415661