Semiconductor component and fabrication method

Details Semiconductor component and fabrication method Semiconductor component and fabrication method

2005-05-17

2005-05-17

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S240000, C438S253000, C438S256000, C257S303000, C257S310000

Reexamination Certificate

active

06893935

ABSTRACT:
A thin lower electrode layer having an optimally protected capacitor dielectric is produced and structured. A conventional metallization layer for strip conductors is placed thereon as an upper electrode and structured. The capacitor dielectric can be deposited on a very even, preferably metallic surface (e.g. preferably TiN), sealed by a thin, preferably metallic layer (e.g. TiN) and protected so that is does not become thinned or damaged by other process steps.

REFERENCES:
patent: 5391905 (1995-02-01), Yamazaki
patent: 5563762 (1996-10-01), Leung et al.
patent: 5644151 (1997-07-01), Izumi et al.
patent: 5712813 (1998-01-01), Zhang
patent: 5929473 (1999-07-01), Nishihori et al.
patent: 6004841 (1999-12-01), Chang et al.
patent: 6017788 (2000-01-01), Jenq
patent: 6025226 (2000-02-01), Gambino et al.
patent: 6432769 (2002-08-01), Fukuda et al.
patent: 6504202 (2003-01-01), Allman et al.
patent: 6635527 (2003-10-01), Greco et al.
patent: 198 38 435 (1999-07-01), None
patent: 198 45 033 (2000-04-01), None
patent: 0 771 022 (1997-05-01), None
patent: 0 800 217 (1997-10-01), None
patent: 0 975 018 (2000-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor component and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component and fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3427948