Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2004-10-29
2008-05-27
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S758000
Reexamination Certificate
active
07378741
ABSTRACT:
A semiconductor component (1) has a substrate (21) and a structure (22, 23) formed from semiconductor/insulator/conductor layers (24to26) on/in the substrate (21). Furthermore, there is an insulator layer (32) which covers the surface and at least parts of the side walls of the semiconductor component (1) but leaves clear part of the surface of the structure (22, 23). Furthermore, there is a conductor layer (33) which is applied to the insulator layer (32) and additionally covers that part of the surface region of the structure (22, 23) which has been left clear by the insulator layer (32).
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Ho Hoang-Quan
Huynh Andy
Infineon - Technologies AG
Maginot Moore & Beck
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