Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-12-08
2010-11-23
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S676000, C257S666000, C361S813000, C361S805000, C361S806000, C361S808000
Reexamination Certificate
active
07838989
ABSTRACT:
A semiconductor component for radio-frequency applications has at least one substrate and one chip, and with contact pads is disclosed. In one embodiment, bonding wires connect the contact pads on the chip to the contact connecting pads. Signals are passed via these contact pads such that signals at high frequencies are passed via one or more contact pads and signals at low frequencies are passed via one or more contact pads. The chip is shifted on the substrate from a central position with respect to the totality of the contact connecting pads, so that the bonding wires for those contact pads via which signals at a high frequency are passed are shorter than bonding wires for those contact pads via which signals at low frequencies are passed.
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Dangelmaier Jochen
Engl Mario
Theuss Horst
Dicke Billig & Czaja, PLLC
Green Telly D
Infineon - Technologies AG
Wilczewski Mary
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