Semiconductor component

Details Semiconductor component Semiconductor component

1981-04-09

1984-08-07

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 39, 357 86, 307305, H01L 2974, H01L 29747

Patent

active

044646739

ABSTRACT:
A semiconductor component, which may be configured as a diac or triac or the like, has a semiconductor body comprising four layers of alternating conductivity type, in which an outer n-emitter carries a cathode, an outer p-emitter carries an anode, and two base layers are respectively adjacent and between the emitter layers. The anode and cathode respectively have terminals for an external circuit and a metal-insulator-semiconductor structure is disposed adjacent the n-emitter layer (p-emitter layer), the metal-insulator-semiconductor structure being provided with a gate electrode insulated from the boundary surface of the semiconductor body and representing a controllable emitter short circuit. A resistor is connected to the cathode (anode) and is connected in an external circuit in series with the cathode terminal (anode terminal). The gate electrode of the metal-insulator-semiconductor structure is connected to that terminal of the resistor which is opposite to the terminal connected to the cathode (anode).

REFERENCES:
patent: 3243669 (1966-03-01), Sah
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4115707 (1978-09-01), Kalfus
patent: 4224634 (1980-09-01), Svedberg
patent: 4244000 (1981-01-01), Ueda et al.
Baliga, "Enhancement and Depletion Mode Vertical Channel M.O.S. Gated Thyristors", Electronics Letters, vol. 15, No. 20, Sep. 1979, pp. 645-647.

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