Semiconductor component

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S713000, C257SE23101, C257SE23104

Reexamination Certificate

active

08067834

ABSTRACT:
In various embodiments, semiconductor components and methods to manufacture these components are disclosed. In one embodiment, a method to manufacture a semiconductor component is disclosed. The semiconductor includes a heat sink and a semiconductor die that has a first terminal on a top surface of the semiconductor die, a second terminal on the top surface of the die, and a third terminal on the bottom surface of the die. The method includes attaching a first portion of a leadframe structure to the first terminal of the semiconductor die. The method further includes attaching the second terminal of the semiconductor die to the heat sink after the attaching of the first portion of the leadframe structure to the first terminal of the semiconductor die, wherein the leadframe structure is spaced apart from the heat sink and is electrically isolated from the heat sink. Other embodiments are described and claimed.

REFERENCES:
patent: 5008736 (1991-04-01), Davies et al.
patent: 6307755 (2001-10-01), Williams et al.
patent: 6455925 (2002-09-01), Laureanti
patent: 6566749 (2003-05-01), Joshi et al.
patent: 6586833 (2003-07-01), Baliga
patent: 6617686 (2003-09-01), Davies
patent: 6649975 (2003-11-01), Baliga
patent: 6653691 (2003-11-01), Baliga
patent: 6674157 (2004-01-01), Lang
patent: 6727117 (2004-04-01), McCoy
patent: 6759746 (2004-07-01), Davies
patent: 6777786 (2004-08-01), Estacio
patent: 6784366 (2004-08-01), Boucher et al.
patent: 6867481 (2005-03-01), Joshi et al.
patent: 6967126 (2005-11-01), Lee et al.
patent: 7093358 (2006-08-01), Akram et al.
patent: 7335534 (2008-02-01), Pavio
patent: 7605451 (2009-10-01), Moline
patent: 2002/0056872 (2002-05-01), Baliga
patent: 2002/0135061 (2002-09-01), Okamoto et al.
patent: 2003/0020162 (2003-01-01), Koike et al.
patent: 2003/0062601 (2003-04-01), Harnden et al.
patent: 2003/0218237 (2003-11-01), Hall et al.
patent: 2004/0043539 (2004-03-01), Lee et al.
patent: 2004/0065947 (2004-04-01), Sugiyama et al.
patent: 2004/0238934 (2004-12-01), Warner et al.
patent: 2005/0017339 (2005-01-01), Yoshiba
patent: 2005/0121701 (2005-06-01), Hirano et al.
patent: 2006/0189038 (2006-08-01), Pavio
patent: 2006/0263944 (2006-11-01), Lange
patent: 2007/0090434 (2007-04-01), Davies et al.
patent: 2007/0096274 (2007-05-01), Pavier et al.
patent: 2007/0108594 (2007-05-01), Ishii
patent: 2007/0132091 (2007-06-01), Wo et al.
patent: 2007/0296077 (2007-12-01), Moline
patent: 2008/0017998 (2008-01-01), Pavio
patent: 2008/0093718 (2008-04-01), Pavio
patent: 2005/069378 (2005-07-01), None
patent: 2009/025961 (2009-02-01), None
Davies, Robert B., “Power Semiconductor Device and Method Therefor”, US Patent Application filed Mar. 23, 2006, U.S. Appl. No. 11/387,617, 176 pgs.
International Search Report and Written Opinion of the International Searching Authority; Dated Sep. 29, 2008; PCT/US2008/071142.
Office Action received for U.S. Appl. No. 12/392,391, mailed on Sep. 14, 2009, 12 pages.
Office Action received for U.S. Appl. No. 12/392,391, mailed on Feb. 17, 2010, 7 pages.
Office Action received for U.S. Appl. No. 11/475,625, mailed on Jun. 26, 2008, 11 pages.
Office Action received for U.S. Appl. No. 11/475,625, mailed on Mar. 18, 2009, 16 pages.
Office Action received for U.S. Appl. No. 11/458,566 mailed on Feb. 5, 2008, 18 pages.
Office Action received for U.S. Appl. No. 11/458,566, mailed on Aug. 15, 2008, 19 pages.
Office Action received for U.S. Appl. No. 11/458,566, mailed on Mar. 5 2009, 19 pages.
Office Action received for U.S. Appl. No. 11/958,889, mailed on Apr. 30, 2008, 5 pages.
Notice of Allowance received for U.S. Appl. No. 11/327,552, mailed on Oct. 2, 2007, 9 pages.
Advisory Action received for U.S. Appl. No. 11/475,625, mailed on May 28, 2009, 3 pages.
Notice of Allowance received for U.S. Appl. No. 11/475,625, mailed on Aug. 21, 2009, 10 pages.
Advisory Action Received for U.S. Appl. No. 11/458,566, mailed on Dec. 9, 2008, 3 pages.
Adamson, Philip, “Lead-free Packaging for Discrete Power Semiconductors”, International IOR Rectifier—as presented at the 2002 JEDEC Conference, Apr./May 2002, 5 pages.
Bussarakons, Tiva, “New Materials and Technologies Solve Hermetic SMD Integration”, International IOR Rectifier—as appeared in PCIM Power Electronic Systems Magazine, Dec. 1999, 5 pages.
Juhel, S., “PowerSO-10RF: The First True RF Power SMD Package”, AN1294 Application Note, Feb. 2001, 12 pages.
Mahalingam, Mali, “Low Rth Device Packaging for High Power RF LDMOS Transistors for Cellular and 3G Base Station Use”, Freescale Semiconductor, Inc. Motorola Inc. 2003, 4 pages.
Moline, Dan, “Semiconductor Component and Method of Manufacture”, U.S. Appl. No. 11/475,625, filed Jun. 27, 2006; Confirmation #: 1042.
Pavio, Jeanne S., “Semiconductor Component and Method of Manufacture”, U.S. Appl. No. 11/458,566, filed Jul. 19, 2006; Confirmation #: 8992.
Prophet, Graham, “Power FETs find their place”, EDN Apr. 17, 2003, 6 pages.
Radivojevic, Z., “Novel Material for Improved Quality of RF-PA in Base-Station Applications”, Presented at 10th International Workshop on Thermal Investigations of ICs and Systems Co-Authored by Nokia Research Center and Freescale Semiconductor Sep./Oct. 2004, 7 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor component will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4304666

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.