Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-09-12
2011-12-06
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S607000, C257S613000, C257SE21042, C257SE21056, C257SE21077, C257SE21085, C257SE21135, C257SE21275
Reexamination Certificate
active
08072043
ABSTRACT:
A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.
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Feiler Wolfgang
Flohrs Peter
Goerlach Alfred
Heyers Klaus
Qu Ning
Kenyon & Kenyon LLP
Nhu David
Robert & Bosch GmbH
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