Semiconductor component

Details Semiconductor component Semiconductor component

2007-04-24

2007-04-24

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S328000, C257S703000, C257S705000, C257S750000, C257S762000, C257S773000

Reexamination Certificate

active

10514171

ABSTRACT:
A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.

REFERENCES:
patent: 4419810 (1983-12-01), Riseman
patent: 5313088 (1994-05-01), Takahashi et al.
patent: 6072240 (2000-06-01), Ohara et al.
patent: 6420755 (2002-07-01), Bloos et al.
patent: 6707138 (2004-03-01), Crowley et al.
patent: 2002/0171134 (2002-11-01), Choi
patent: 2 817 907 (2002-04-01), None
patent: 99 26295 (1999-05-01), None

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