Semiconductor component

Details Semiconductor component Semiconductor component

2006-08-15

2006-08-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S339000

Reexamination Certificate

active

07091533

ABSTRACT:
The invention relates to a semiconductor component, in which regions of the conduction type opposite to the conduction type of the drift zone are incorporated in the drift zone and also in the region of the active zones.

REFERENCES:
patent: 4982260 (1991-01-01), Chang et al.
patent: 5177572 (1993-01-01), Murakami
patent: 5623151 (1997-04-01), Ajit
patent: 6040600 (2000-03-01), Uenishi et al.
patent: 6201279 (2001-03-01), Pfirsch
patent: 6445038 (2002-09-01), Tihanyi
patent: 6621132 (2003-09-01), Onishi et al.
patent: 2002/0179942 (2002-12-01), Tihanyi
Singh, Ranbir et al., “High-Power 4H-SiC JBS Rectifiers,” IEEE Transactions on Electron Devices, vol. 49, No. 11, pp. 2054-2063 (Nov. 2002).

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