Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2005-08-30
2005-08-30
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S134000, C257S141000, C257S368000
Reexamination Certificate
active
06936866
ABSTRACT:
A vertical or lateral semiconductor component derives a signal from a high load voltage. This signal can be used directly for driving the semiconductor component or, alternatively, a control device.
REFERENCES:
patent: 4811075 (1989-03-01), Eklund
patent: 5170241 (1992-12-01), Yoshimura et al.
patent: 5285369 (1994-02-01), Balakrishnan
patent: 5296725 (1994-03-01), Nandakumar et al.
patent: 5313082 (1994-05-01), Eklund
patent: 5780895 (1998-07-01), Barret et al.
patent: 6359309 (2002-03-01), Liao et al.
patent: 44 29 284 (1996-02-01), None
patent: 0 585 788 (1994-03-01), None
patent: 03 155 167 (1991-07-01), None
patent: 11-41019 (1999-02-01), None
patent: 11-251834 (1999-09-01), None
G. Deboy et al.: “A new generation of high voltage MOSFETs breaks the limit line of silicon”,IEDM 98, pp. 683-685, XP-000859463.
Deboy Gerald
Mündel Gerald
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Rose Kiesha
Stemer Werner H.
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