Semiconductor component

Details Semiconductor component Semiconductor component

2005-08-23

2005-08-23

Helms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

C257S200000, C257S605000

Reexamination Certificate

active

06933546

ABSTRACT:
A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth semiconductor region (140, 340) above the third semiconductor region, a fifth semiconductor region (150, 350) above the second semiconductor region and at least partially contiguous with the fourth semiconductor region, a sixth semiconductor region (160, 360) above and electrically shorted to the fifth semiconductor region, and an electrically insulating layer (180, 380) above the fourth semiconductor region and the fifth semiconductor region. A junction (145, 345) between the fourth semiconductor region and the fifth semiconductor region forms a zener diode junction, which is located only underneath the electrically insulating layer. In one embodiment, a seventh semiconductor region (170) circumscribes the third, fourth, fifth, and sixth semiconductor regions.

REFERENCES:
patent: 5077590 (1991-12-01), Fujihira
patent: 5869882 (1999-02-01), Chen et al.
patent: 0681 320 (2001-10-01), None

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