Semiconductor cold electron emission device

Details Semiconductor cold electron emission device Semiconductor cold electron emission device

1974-03-18

1976-07-27

Edlow, Martin H.

357 16, 357 52, 357 61, H01L 29161, H01L 2714, H01L 2920

Patent

active

039720608

ABSTRACT:
A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

REFERENCES:
patent: 3667007 (1972-05-01), Kressel
patent: 3696262 (1972-10-01), Antypas
Schadi, et al. Appl. Phys. Lett., vol. 20, No. 10, May 15, 1972.
B309,756, Jan. 1975, Kressel, 148/171.

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