Semiconductor CMOS gate array

Details Semiconductor CMOS gate array Semiconductor CMOS gate array

1990-08-24

1992-01-21

Mintel, William

357 45, 357 41, H01L 2702

Patent

active

050831780

ABSTRACT:
A semiconductor device of a master slice type comprises a basic cell comprising: first and second MOS transistors of a first conductivity type in each of which one of a source region and a drain region is commonly used; third and fourth MOS transistors of the first conductivity type in each of which one of a source region and a drain region is commonly used; fifth and sixth MOS transistors of a second conductivity type in each of which one of a source region and a drain region is commonly used; and seventh and eighth MOS transistors of the second conductivity type in each of which one of a source region and a drain region is commonly used. Gate electrodes of the first and third MOS transistors are commonly used, gate electrodes of the second and fourth MOS transistors are commonly used, and gate electrodes of the fifth and seventh MOS transistors are commonly used.

REFERENCES:
patent: 4688072 (1987-08-01), Heath et al.
patent: 4764798 (1988-08-01), Kawabata
patent: 4783692 (1988-11-01), Uratani
patent: 4982114 (1991-01-01), Nakamura et al.

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