Semiconductor circuit with at least two field effect transistors

Details Semiconductor circuit with at least two field effect transistors Semiconductor circuit with at least two field effect transistors

1979-03-15

1981-05-05

Dixon, Harold A.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, H03K 301

Patent

active

042661510

ABSTRACT:
A monolithically integrated MOS-circuit with a substrate bias voltage generator is disclosed. A generator, a control loop, a threshold voltage detector, and a pump circuit are provided. An acceleration of the regulation of the substrate bias voltage is achieved wherein the output signal of an oscillator is connected to the Reset or Set input of a RS flip-flop. The two outputs of the flip-flop are applied in common to the substrate of the MOS-circuit via a respective pump circuit. A control loop with the threshold voltage detector serving for the regulation of the substrate bias voltage controls the flip onset via an additional input of the flip-flop and, thus, the substrate bias voltage.

REFERENCES:
patent: 4004164 (1977-01-01), Cranford et al.
patent: 4115710 (1978-09-01), Lou
"Fast Mostek Rom-", Electronics, Sep. 16, 1976, p. 42.
"Substrate and Load Gate Voltage Compensation", by Blaser et al., IEEE International Solid State Circuit Conference, 1976, pp. 56, 57.

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