Semiconductor circuit with a circuit part controlled by a substr

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307591, 307592, H03K 1722, H03K 1706, H03K 1710

Patent

active

044544316

ABSTRACT:
A semiconductor circuit assembly having capacitively controlled field effect transistors, includes a semiconductor chip containing a digital circuit part for supplying timing pulses for controlling operation of the digital circuit part, and terminal having at least one conductive connection to the digital circuit part and the timing pulse generator for supplying potentials thereto from a direct current source. An oscillator is provided and a substrate-bias generator connected to the oscillator and the timing pulse generator. The substrate-bias generator is controlled by the oscillator for producing a bias voltage able to reach a given full value and for activating the timing pulse generator only after the substrate bias voltage has reached its full value.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 3838357 (1974-09-01), Billeg, Jr.
patent: 4296340 (1981-10-01), Horan
Frantz et al., MOSFET Substrate Self-Biasing, IBM Tech. Discl. Bull., vol. 13, No. 8, pp. 2385-2386, Jan.-71.
Gladstein et al., FET Substrate Generator Derived from Low Voltage Power Supply, IBM Tech. Discl. Bull., vol. 21, No. 12, pp. 4935-4936, May-79.

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